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A message from Stephen Rothrock: Market observations and insights for 2012
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Momentum from the 2010 semiconductor market rebound carried into Q1 2011, but quickly dissipated as devastating natural disasters took their toll on the industry, not to mention the countless lives of people in Japan and Thailand. This, combined with a general economic malaise stemming from concerns about sovereign debt, housing, oil, and unemployment paved the way for virtually flat growth in 2011. These economic realities are increasingly forcing companies to streamline themselves and reexamine capital allocation strategies. With the exception of large players such as Intel, Samsung, and TSMC – who in aggregate are projected to account for half of the industry’s capital expenditures in 2012 – companies will largely tap their brakes on capital investment this year.
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Come hear ATREG speak at GSF 2012
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In an increasingly competitive and volatile economy, semiconductor companies are starting to reconsider their manufacturing strategy and infuse creativity in their operational fab deal structures. Recent examples are the acquisition of the Renesas Roseville, CA fab by TELEFUNKEN Semiconductors and the purchase of IDT’s Hillsboro, OR fab by Alpha and Omega Semiconductor Ltd. (AOS). If a fab-lite strategy makes sense for an IDM, can it make sense for a fabless company? What are the key deciding factors behind this new approach? These are the questions that Doug Barrett and Eric Larsen from ATREG will address at the 9th Annual Leading Global Semiconductor Forum (GSF) to be held March 7-9 in Shanghai, China, based on real-world case studies and 10 years of advising semiconductor companies with their fab disposition and acquisitions.
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Industry news: ATREG advises successful sale of IDT fab to AOS
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A fabless company buying a fab is an unusual deal, but a new and innovative approach that we may see more of in 2012. ATREG has successfully advised IDT in the sale of its operational 200mm semiconductor manufacturing facility based in Hillsboro, OR to Alpha and Omega Semiconductor Limited (AOS), a designer, developer, and global supplier of a broad range of power semiconductors based in Sunnyvale, Calif.
The flexible campus, located close to the Portland-Hillsboro airport, includes a 50,000 square foot class-one cleanroom in which IDT manufactured standard logic, PLL, network ICs, SRAM, and multiport semiconductor products. The 25-acre, 245,000 square foot facility can be expanded to accommodate future growth.
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Available for purchase: Texas Instruments fabs in Kyushu, Japan, and Houston, TX
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ATREG invites interested buyers to explore two Texas Instruments fab offerings. The Kyushu, Japan campus includes a 150mm operational fab along with an advanced assembly, test, and packaging operation capable of 300mm and 200mm. The Houston, TX site offers a 150mm operational fab and wafer bump facility.
JAPAN: 150mm operational fab / advanced A/T and packaging operation
The well-maintained Hiji fab located in the silicon manufacturing region of Kyushu, Japan includes a high-quality, 150mm operational fab and an advanced packaging operation capable of 300mm and 200mm production. Technologies used in the fab include multiple analog CMOS (0.72-1.2 µm), multiple (1.0 to 0.72 µm) high-power analog BiCMOS, and high-voltage SOI BiCMOS with a current equipment capacity of approximately 22,500 wafers per month (0.5µm and larger). The fab is automotive-qualified. The A/T facility produces ultra-fine pitch FlipChip, stacked package on package, stacked die, and high-density, high pin-count copper wire bonding, offering a capacity of approximately 5,000,000 units per month at a 250 average pin count.
USA: 150mm operational fab and wafer bump facility
A robust and cost-effective 150mm operational fab, the Houston facility is located on a 196-acre site. Offering a capacity of approximately 40,000 wafers per month, the fab is automotive-qualified (ISO / TS 16949-certified) and offers a unique wafer bump facility (wafer-level chip-scale package / plating capability). Technologies used include 1.0 µm CMOS with embedded flash memory, automotive 0.8 µm BiCMOS, multiple CMOS logic (0.72-2.0 µm), multiple analog CMOS (0.8-1.2µm), multiple (1.0-0.72 µm) high-power analog BiCMOS, high-precision analog bipolar, and ultra high-speed analog bipolar.
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Connect with ATREG at upcoming industry events
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In March, members of the ATREG team will be attending the following industry events in China. We are now taking appointments at:
We look forward to seeing you there!
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